Design Guidelines for True Green LEDs and High efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys

نویسندگان

  • Samarth Agarwal
  • Kyle H. Montgomery
  • Timothy B. Boykin
  • Gerhard Klimeck
  • Jerry M. Woodall
چکیده

In the fields of solid state lighting and high efficiency solar photovoltaics (PV), a need still exists for a material system that can target the 2.3-2.5eV energy range. The ZnSe/GaAs system is shown to have great potential. The digital alloy approach can be utilized as a well-ordered design alternative to the disordered alloyed systems. The effective band-gap of the ZnSe/GaAs(001) superlattice has been studied, as a function of the constituent monolayers using tight binding. The possibility of engineering a range of band-gaps with the same material system, to achieve the optimum value for solar PV and LED applications, has been proposed.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High-brightness II–VI light-emitting diodes grown by molecular-beam epitaxy on ZnSe substrates

High-brightness blue and green light-emitting diodes ~LEDs! based on II–VI double heterostructures ~DHs! have been successfully grown by molecular-beam epitaxy ~MBE! on ~100! ZnSe substrates. These LED structures consist of a 500–1000 Å thick active region of undoped blue-emitting Zn0.9Cd0.1Se/ZnSe multiple quantum wells or a green-emitting ZnTe0.1Se0.9 single quantum well sandwiched between a ...

متن کامل

APPLIED PHYSICS REVIEWS—FOCUSED REVIEW High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications

AlGaInP lattice matched to GaAs is suited for light-emitting diodes ~LEDs! operating in the red, orange, yellow, and yellow–green wavelength range. Such long-wavelength visible-spectrum devices will play an important role in solid-state lighting applications. This review discusses the major classes of AlGaInP device structures, including absorbing-substrate ~AS! LEDs, absorbing substrate LEDs e...

متن کامل

TEM investigation of nucleation and initial growth of ZnSe nanowires

Single crystalline ZnSe nanowires were fabricated on GaAs substrates by molecular beam epitaxy technique via Au-catalyzed vapor-liquid-solid reaction. The nucleation and initial growth of the nanowires were investigated by high-resolution transmission electron microscopy. It was revealed that Au catalysts initially reacted with the substrate forming binary AuGa2 alloy droplets. The sizes of the...

متن کامل

Bright, efficient, and color-stable violet ZnSe-based quantum dot light-emitting diodes.

In this paper, highly stable violet-blue emitting ZnSe/ZnS core/shell QDs have been synthesized by a novel "low temperature injection and high temperature growth" method. The resulting nearly monodisperse ZnSe/ZnS core/shell QDs exhibit excellent characteristics such as a high color saturation (typical spectral full width at half-maximum between 12 and 20 nm), good emission tunability in the vi...

متن کامل

Design of ARC less InGaP/GaAs DJ solar cell with high efficiency

In this work, we used the Atlas Tcad Silvaco software to investigate the effect of adding an additional BSF layer on the performance of InGap / GaAs dual junction solar cells with a hetero tunnel Al0.7Ga0.3As-In0.49Ga0.51P junction. These analyzes indicate that, the addition of a BSF layer to the bottom cell the increase in the thickness of the BSF top cell would reduce the recombination and in...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2014